document number: 83 305 www.vishay.com rev. 1.1, 23-sep-10 401 ir receiver modules for mid range proximity sensors tsop4p.. vishay semiconductors mechanical data pinning 1 = out, 2 = gnd, 3 = v s features ? low supply current ? photo detector and preamplifier in one package ? internal filter for burst frequency ? improved shielding against emi ? supply voltage: 2.7 v to 5.5 v ? improved immunity against ambient light ? insensitive to supply voltage ripple and noise ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec description the tsop4p.. series are miniaturized receivers for mid range proximity sensor systems. a pin diode and a preamplifier are assembled on a lead frame, the epoxy package acts as an ir filter. the output pulse width of the tsop4p.. has an almost linear relationship to the distance of the emitter or the distance of an reflecting object. the ts op4p.. is optimized to suppress almost all spurious pulses from energy saving fluorescent lamps. this component has not been qualified according to automotive specifications. note (1) other frequencies available by request block diagram application circuit 16672 1 2 3 parts table carrier frequency standard applications (agc2/agc8) 38 khz (1) TSOP4P38 33 k 2 3 1 v s out demo- gnd pass agc input pin band dulator control circuit 16833_5 c 1 ir receiver gnd circuit c r 1 + v s gnd transmitter with tsalxxxx v s v o 17170_7 out the external components r 1 and c 1 are optional to improve the robustness against electrical overstress (typical values are r 1 = 100 , c 1 = 0.1 f). the output voltage v o should not be pulled down to a level below 1 v by the external circuit. the capacitive load at the output should be less than 2 nf.
www.vishay.com document number: 83305 402 rev. 1.1, 23-sep-10 tsop4p.. vishay semiconductors ir receiver modu les for mid range proximity sensors note ? stresses beyond those listed und er absolute maximum ratings may cause permanent damage to the device. this is a stress ratin g only and functional operation of the device at these or any other cond itions beyond those indicated in the operational sections of t his specification is not implied. exposure to absolute maximum rating condtions for extended pe riods may affect the device reliability. typical characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - output active low fig. 2 - puls e length and sensitivity in dark ambient absolute maximum ratings parameter test conditi on symbol value unit supply voltage (pin 3) v s - 0.3 to + 6 v supply current (pin 3) i s 5ma output voltage (pin 1) v o - 0.3 to 5.5 v voltage at output to supply v s - v o - 0.3 to (v s + 0.3) v output current (pin 1) i o 5ma junction temperature t j 100 c storage temperature range t stg - 25 to + 85 c operating temperature range t amb - 25 to + 85 c power consumption t amb 85 c p tot 10 mw soldering temperature t 10 s, 1 mm from case t sd 260 c electrical and optical characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit supply current (pin 3) e v = 0, v s = 5 v i sd 0.65 0.85 1.05 ma e v = 40 klx, sunlight i sh 0.95 ma supply voltage v s 2.7 5.5 v transmission distance e v = 0, test signal see fig. 1, ir diode tsal6200, i f = 400 ma d45m output voltage low (pin 1) i osl = 0.5 ma, e e = 0.7 mw/m 2 , test signal see fig. 1 v osl 100 mv minimum irradiance pulse width tolerance: t pi - 5/f o < t po < t pi + 6/f o , test signal see fig. 1 e e min. 0.17 0.35 mw/m 2 maximum irradiance t pi - 5/f o < t po < t pi + 6/f o , test signal see fig. 1 e e max. 30 w/m 2 directivity angle of half transmission distance ? 1/2 45 deg e e t t pi * t * t pi 10/f 0 is recommended for optimal function v o v oh v ol t 16110 optical test signal (ir diode tsal6200, i f = 0.4 a, 30 pulses, f = f 0 , t = 10 ms) output signal t d 1) t po 2) 1) 7/f 0 < t d < 15/f 0 2) t pi - 5/f 0 < t po < t pi + 6/f 0 1.0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.1 1 10 10 2 10 3 10 4 10 5 e e - irradiance (mw/m 2 ) t po - output pulse width (ms) 21391 input burst length output pulse width = 950 nm, optical test signal, fig.1
document number: 83 305 www.vishay.com rev. 1.1, 23-sep-10 403 tsop4p.. ir receiver modu les for mid range proximity sensors vishay semiconductors fig. 3 - output function fig. 4 - output pulse diagram fig. 5 - frequency dependence of responsivity fig. 6 - sensitivity in bright ambient fig. 7 - sensitivity vs. supply voltage disturbances fig. 8 - sensitivity vs. electric field disturbances e e t v o v oh v ol t 600 s 600 s t = 60 ms t on t off 94 8134 optical test signal output signal , (see fig. 4) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.1 1 10 10 2 10 3 10 4 10 5 e e - irradiance (mw/m 2 ) t on , t off - output pulse width (ms) 21392 = 950 nm, optical test signal, fig. 3 t on t off 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.7 0.9 1.1 1.3 f/f 0 - relative frequency 16925 f = f 0 5 % f(3 db) = f 0 /10 e /e - rel. responsivity e min. e e e min. - threshold irradiance (mw/m 2 ) 0 1 1.5 4.5 0.5 2 2.5 3 3.5 4 5 e e - ambient dc irradiance (w/m 2 ) 0.01 0.1 1 10 100 21393_1 wavelength of ambient illumination: = 950 nm correlation with ambient light sources: 10 w/m 2 = 1.4 klx (std. illum. a, t = 2855 k) 10 w/m 2 = 8.2.klx (daylight, t = 5900 k) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 1 10 100 1000 vs rms - ac voltage on dc supply voltage (mv) 21394_1 e e min. - threshold irradiance (mw/m 2 ) f = f 0 f = 30 khz f = 20 khz f = 10 khz f = 100 hz 0 50 100 150 200 250 300 350 400 450 500 0 500 1000 1500 2000 2500 3000 f - emi frequency (mhz) e - max. field strength (v/m) 20747
www.vishay.com document number: 83305 404 rev. 1.1, 23-sep-10 tsop4p.. vishay semiconductors ir receiver modu les for mid range proximity sensors fig. 9 - max. output pulse width vs. irradiance fig. 10 - sensitivity vs. ambient temperature fig. 11 - relative spectral sensitivity vs. wavelength fig. 12 - horizontal directivity fig. 13 - sensitivity vs. supply voltage 22088 0 20 40 60 80 100 120 140 160 180 200 0.1 1 10 100 t po - output pulse width (ms) e e - irradiance (mw/m 2 ) burst length = 300 ms, f = f o t amb - ambient temperature (c) e e min. - threshold irradiance (mw/m 2 ) 21397_1 0 0.05 0.1 0.15 0.2 0.25 0.3 - 30 - 10 10 30 50 70 90 0.0 0.2 0.4 0.6 0.8 1.0 1.2 750 850 950 1050 1150 - wavelength (nm) 16919 s ( ) - relative spectral sensitivity rel 96 12223p2 0.4 0.2 0 0.6 0.9 0 30 10 20 40 50 60 70 80 1.0 0.8 0.7 d rel - relative transmission distance 0 0.05 0.1 0.15 0.2 0.25 0.4 1.5 2.5 3.5 4.5 5.5 v s - supply voltage (v) e e min. - sensitivity (mw/m 2 ) 21398_1 0.3 0.35
document number: 83 305 www.vishay.com rev. 1.1, 23-sep-10 405 tsop4p.. ir receiver modu les for mid range proximity sensors vishay semiconductors the typical application of the TSOP4P38 is a reflective sensor with analog information contained in its output. such a sensor i s evaluating the time required by the agc to suppress a quasi co ntinuous signal. the time requir ed to suppress such a signal is longer when the signal is strong than when the signal is weak, resulting in a pulse length corresponding to the distance of an object from the sensor. th is kind of analog information can be evaluated by a microcontroller. the absolute amount of reflected light depends much on the environment and is not evaluated. only sudden changes of the amount of reflected light, and therefore changes in the pulse width, are evaluated using this application. example of a signal pattern: example for a sensor hardware: there should be no common window in front of the emitter and receiver in order to avoid crosstalk by guided light through the window. the logarithmic characteristic of the agc in the TSOP4P38 results in an almost linear re lationship between distance and pulse width. ambient light has al so some impact to the pulse width of this kind of sensor, making the pulse shorter. fig. 14 - distance characterisitic of a typical reflective sensor using the TSOP4P38 optical signal response of the TSOP4P38 (strong reflection) 500 ms 120 ms, 38 khz response of the TSOP4P38 (weak reflection) 22090 emitter tsal6200 ir receiver TSOP4P38 separation to avoid crosstalk by stray light inside the housing 22091 22089 0 20 40 60 80 100 120 0 0.2 0.4 0.6 0.8 1.0 output pulse widht (ms) distance of a reflective object (m) ir emitter: tsal6200 receiver: TSOP4P38 reflective object: paper din a4 emitter current 2 ma emitter current 10 ma
www.vishay.com document number: 83305 406 rev. 1.1, 23-sep-10 tsop4p.. vishay semiconductors ir receiver modu les for mid range proximity sensors package dimensions in millimeters 16003 not indicated tolerances 0.2 drawing-no.: 6.550-5169.11-4 issue: 13; 17.12.08 specifications according to din technical drawings 3.9 0.5 max. 1.3 4.1 6 0.85 max. 0.89 1 1 8.25 (5.55) 6.95 out v s gnd 5.3 30.5 0.5 2.54 nom. 2.54 nom. 0.7 max. 5.6 marking area r 2.5
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